Showing results 42 to 53 of 53
Shapes of InAs quantum dots on InGaAs/InP Hwang, H; Yoon, S; Kwon, H; Yoon, E; Kim, HS; Lee, JeongYong; Cho, B, APPLIED PHYSICS LETTERS, v.85, pp.6383 - 6385, 2004-12 |
Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.9, pp.5657 - 5660, 2002-05 |
Stability problems in CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition at low temperature Kim, TW; Park, HL; Lee, JeongYong, APPLIED SURFACE SCIENCE, v.108, no.1, pp.121 - 125, 1997-01 |
Strain effect and atomic arrangement studies in ZnTe/GaAs lattice-mismatched heterostructures Lee, HS; Choi, JH; Lee, JeongYong; Lee, JH; Lee, DU; Kim, TW; Park, HL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.1017 - 1020, 2000-12 |
Strain effects and atomic arrangements of 60 degrees and 90 degrees dislocations near the ZnTe/GaAs heterointerface Kim, TW; Lee, DU; Lee, HS; Lee, JeongYong; Park, HL, APPLIED PHYSICS LETTERS, v.78, no.10, pp.1409 - 1411, 2001-03 |
Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates Noh, YK; Hwang, YJ; Kim, MD; Kwon, YJ; Oh, JE; Kim, Y.H; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1929 - 1932, 2007-06 |
STRUCTURAL AND ELECTRICAL-PROPERTIES OF A STRAINED INSB/GAAS HETEROSTRUCTURE KIM, TW; YOO, BS; MCKEE, MA; Lee, JeongYong, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.142, no.1, pp.23 - 27, 1994-03 |
STRUCTURAL AND OPTICAL-PROPERTIES OF A STRAINED CDTE/GAAS HETEROSTRUCTURE GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION AT LOW-TEMPERATURE KIM, TW; PARK, HL; Lee, JeongYong, THIN SOLID FILMS, v.259, no.2, pp.253 - 258, 1995-04 |
Structural properties of lattice matched Zn0.92Mg0.08S0.12Se0.88/GaAs heterostructures Kim, TW; Lee, DU; You, YS; Cho, JW; Seo, KY; Lim, YS; Lee, JeongYong; et al, APPLIED SURFACE SCIENCE, v.143, no.1-4, pp.201 - 205, 1999-04 |
Synthesis and characterization of heterostructured Mn3GaN0.5/GaN nanowires Ha, B; Kim, HC; Kang, SG; Kim, YH; Lee, JeongYong; Park, CY, CHEMISTRY OF MATERIALS, v.17, pp.5398 - 5403, 2005-11 |
The relation between the microstructural properties and the geometry factors for GaN nanorods formed on Si(111) substrates Lee, KH; Lee, JeongYong; Kwon, YH; Ryu, SY; Kang, TW; Jung, HY; Park, SH; et al, SOLID STATE COMMUNICATIONS, v.150, pp.636 - 639, 2010-04 |
Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07 |
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