Showing results 3 to 16 of 16
EFFECTS OF F+ IMPLANTATION ON THE CHARACTERISTICS OF POLY-SI FILMS AND LOW-TEMPERATURE N-CH POLY-SI THIN-FILM TRANSISTORS PARK, JW; Ahn, Byung Tae; LEE, K, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.34, no.3, pp.1436 - 1441, 1995-03 |
Effects of nitrogen on the passivity of Fe-20Cr alloy Ha, H; Jang, H; Kwon, Hyuk-Sang; Kim, S, CORROSION SCIENCE, v.51, pp.48 - 53, 2009-01 |
Element-Resolved Corrosion Analysis of Stainless-Type Glass-Forming Steels Duarte, M. J.; Klemm, J.; Klemm, S. O.; Mayrhofer, K. J. J.; Stratmann, M.; Borodin, S.; Romero, A. H.; et al, SCIENCE, v.341, no.6144, pp.372 - 376, 2013-07 |
Enhancement of a top emission organic light-emitting diode with a double buffer layer Chung, Sung Mook; Hwang, Chi-Sun; Lee, Jeong-IK; Park, Sang Hee Ko; Yang, Yong Suk; Do, Lee-Mi; Chu, Hye Yong, SYNTHETIC METALS, v.158, pp.561 - 564, 2008-08 |
INVESTIGATION OF ELECTRICAL-PROPERTIES AND STABILITY OF SCHOTTKY CONTACTS ON (NH4)(2)S-X-TREATED N-TYPE AND P-TYPE IN0.5GA0.5P KWON, SD; KWON, HK; CHOE, BD; LIM, H; Lee, JeongYong, JOURNAL OF APPLIED PHYSICS, v.78, no.4, pp.2482 - 2488, 1995-08 |
Monodisperse Carbon Nitride Nanosheets as Multifunctional Additives for Efficient and Durable Perovskite Solar Cells Kim, Dae-won; Choi, Jungwoo; Byun, Jinwoo; Kim, Jun Tae; Lee, Gang San; Kim, Jin Goo; Kim, Daehan; et al, ACS APPLIED MATERIALS & INTERFACES, v.13, no.51, pp.61215 - 61226, 2021-12 |
Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2O3/SiNx Gate Insulator Kim, Yujin; Lee, Kwang Heum; Mun, Geumbi; Park, Kyeongwoo; Park, Sang-Hee Ko, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.12, 2017-12 |
Perovskite-polymer composite cross-linker approach for highly-stable and efficient perovskite solar cells![]() Han, Tae-Hee; Lee, Jin-Wook; Choi, Chungseok; Tan, Shaun; Lee, Changsoo; Zhao, Yepin; Dai, Zhenghong; et al, NATURE COMMUNICATIONS, v.10, 2019-01 |
Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors Ko, Jong Beom; Yeom, Hye In; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.37, no.1, pp.39 - 42, 2016-01 |
Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors Lee, Ju-Ho; Ahn, Cheol-Hyoun; Hwang, Soo-Yeon; Woo, Chang-Ho; Park, Jin-Seong; Cho, Hyung-Koun; Lee, Jeong-Yong, THIN SOLID FILMS, v.519, pp.6801 - 6805, 2011-08 |
THE ANODIC BEHAVIOR OF HOT-GALVANIZED ZINC LAYER IN ALKALINE-SOLUTION Pyun, Su Il; BAE, JS; PARK, SY; KIM, JS; Lee, Zin-Hyoung, CORROSION SCIENCE, v.36, no.5, pp.827 - 835, 1994-05 |
The effects of surface treatment for ZnS : Ag,Cl using a combination of stirring and ultrasonication in KOH solutions Lee, DC; Bukesov, SA; Lee, S; Kang, JH; Jeon, DukYoung; Park, DH; Kim, JY, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.11, pp.227 - 231, 2004 |
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009 |
ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors Dora, Y; Han, S; Klenov, D; Hansen, PJ; No, Kwangsoo; Mishra, UK; Stemmer, S; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, pp.575 - 581, 2006-03 |
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