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Showing results 3 to 6 of 6

3
RBS Measurements of GexSi1-x/Si(100) Crystals Grown by Solid Phase Epitaxy by Using an a-Ge/Au/Si(100) Structure

H.S. Kim; J.J. Lee; K.H. Kim; T.G. Im; C.K. Choi; J.Y. Lee, 응용물리, v.10, no.3, pp.252 - 257, 1997-12

4
Structural Properties of GexSi1-x Films Grown on Si(111) Substrate by Using Solid Phase Epitaxy

H.S. Kim; B.Y. Ahn; J.J. Lee; K.H. Kim; C.K. Choi; J.Y. Lee, 한국응용물리학회지, v.11, no.4, pp.413 - 418, 1998-05

5
Structural Properties of GexSi1-x/Si(100) Grown by Solid Phase Epitaxy

H.S. Kim; J.J. Lee; K.H. Kim; T.K. Im; C.S. Yoo; C.K. Choi; Lee, JeongYong, 응용물리, v.9, no.1, pp.79 - 84, 1996-12

6
The Structural Properties of Epitaxial PtSi Films Grown on Si(111) Substrates by Solid Phase Epitaxy

C.K. Choi; M.S. Kang; S.G. Kim; K.S. Suh; J.Y. Lee; K.H. Kim, 응용물리, v.10, no.2, pp.147 - 152, 1997-12

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