DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, Jong Tae | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.contributor.author | Kang, Sang-Won | - |
dc.contributor.author | Ahn, Byung Tae | - |
dc.contributor.author | Yoo, Ilyung | - |
dc.date.accessioned | 2007-10-30T03:12:50Z | - |
dc.date.available | 2007-10-30T03:12:50Z | - |
dc.date.issued | 1996-02-20 | - |
dc.identifier.citation | Thin Solid Films, 288, 41-44 | en |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TW0-3VSH17X-3Y&_user=170364&_coverDate=11%2F15%2F1996&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c&_acct=C000013318&_version=1&_urlVersion=0&_userid=170364&md5=5961075e921d7bdee470aadd44f13ec2 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1796 | - |
dc.description.abstract | A novel antifuse structure with planar-type polysilican pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiOJpoly-Si/SiOa/AI layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 rim. When a programming voltage is applied, the electrodes are connoted by the mass transfer of aluminum through the dielectric and the doped polysilican pad. The an-state resistance of about 10 ~, which is the lowest an-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 I~m in the horizontal direction and a minimum diameter of 320 nm in the vertical direction. | en |
dc.language.iso | en_US | en |
dc.publisher | Elsevier | en |
dc.subject | antifuse structure | en |
dc.subject | link formation | en |
dc.title | Investigation of link formation in a novel planar-type antifuse structure | en |
dc.type | Article | en |
dc.identifier.doi | 10.1016/S0040-6090(96)08812-8 | - |
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