A replacement of high-k process for CMOS transistor by atomic layer deposition

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A replacement of high-k process was implemented on an independent double gate FinFET, following the ordinary gate-first process with minor modifications. The present scheme involves neither exotic materials nor unprecedented processing. After the source/drain process, the sacrificial gate oxide was selectively substituted with amorphous Ta2O5 via conformal plasma enhanced atomic layer deposition. The present gate-first gate-dielectric-last scheme combines the advantages of the process and design simplicity of the gate-first approach and the control of the effective gate workfunction and the interfacial oxide of the gate-dielectric-last approach. Electrical characterization data and cross-sectional images are provided as evidence of the concept.
Publisher
IOP PUBLISHING LTD
Issue Date
2013-08
Language
English
Article Type
Article
Citation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.8

ISSN
0268-1242
DOI
10.1088/0268-1242/28/8/082003
URI
http://hdl.handle.net/10203/175553
Appears in Collection
EE-Journal Papers(저널논문)
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