ZnO/p-GaN Heterostructure for Solar Cells and the Effect of ZnGa2O4 Interlayer on Their Performance

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We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-sun illumination conditions, respectively. This phenomenon can be attributed to the formation of high-resistive ultra-thin layers at the ZnO/p-GaN junction interface during high temperature deposition. Transmission electron microscopy (TEM) studies carried out on the grown samples reveals that the ultra-thin layer consists of ZnGa2O4. It is found that the presence of insulating ZnGa2O4 film is detrimental in the performance of proposed heterostructure for solar cells.
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2013-01
Language
English
Article Type
Article
Citation

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.1, pp.448 - 451

ISSN
1533-4880
DOI
10.1166/jnn.2013.6943
URI
http://hdl.handle.net/10203/174911
Appears in Collection
MS-Journal Papers(저널논문)
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