DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Jun-Hyuck | ko |
dc.contributor.author | Hwang, Young-Hwan | ko |
dc.contributor.author | Jin, Jung-Ho | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.date.accessioned | 2013-08-08T05:12:09Z | - |
dc.date.available | 2013-08-08T05:12:09Z | - |
dc.date.created | 2013-07-22 | - |
dc.date.created | 2013-07-22 | - |
dc.date.created | 2013-07-22 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | MRS COMMUNICATIONS, v.2, no.1, pp.17 - 22 | - |
dc.identifier.issn | 2159-6859 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174428 | - |
dc.description.abstract | Novel fluorine-doped zinc tin oxide (ZTO: F) thin-film transistors (TFTs) have been fabricated using an aqueous solution process. Exploiting hydrolysis and condensation reactions in an aqueous solution process, organic-free ZTO: F thin films were fabricated at a low temperature of 250 degrees C. The fabricated TFT device shows a field-effect mobility of 2.85 cm(2)/V s, on-to-off current ratios exceeding 10(7), and sub-threshold swings of 0.83 V/dec. The ZTO: F TFT also displays high operational stability of Delta V-th = 1.73 V despite incorporation of a large amount of fluorine and use of a low-temperature annealing process. This is attributed to effective passivation of oxygen vacancy diffusion by metal fluoride bonds at the ZTO: F channel/gate dielectric interface. | - |
dc.language | English | - |
dc.publisher | CAMBRIDGE UNIV PRESS | - |
dc.title | Low-temperature aqueous solution processed fluorine-doped zinc tin oxide thin-film transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000314591300005 | - |
dc.identifier.scopusid | 2-s2.0-85011457798 | - |
dc.type.rims | ART | - |
dc.citation.volume | 2 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 17 | - |
dc.citation.endingpage | 22 | - |
dc.citation.publicationname | MRS COMMUNICATIONS | - |
dc.identifier.doi | 10.1557/mrc.2012.1 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | XPS | - |
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