Dislocation-free and strain-relaxed GaN nanorods formed by a thermal gas treatment

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Publisher
International workshop on nitride semiconductor (IWN2010)
Issue Date
2010-09-19
Language
ENG
Citation

International workshop on nitride semiconductor (IWN2010)

URI
http://hdl.handle.net/10203/171996
Appears in Collection
PH-Conference Papers(학술회의논문)
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