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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

Dislocation-free and strain-relaxed GaN nanorods formed by a thermal gas treatment

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dc.contributor.authorKim, Je-hyung-
dc.contributor.authorOh, Chung-Seok-
dc.contributor.authorKo, Young-ho-
dc.contributor.authorKo, Suk-Min-
dc.contributor.authorCho, Yong-Hoon-
dc.date.accessioned2013-03-29T16:07:25Z-
dc.date.available2013-03-29T16:07:25Z-
dc.date.created2012-08-13-
dc.date.issued2010-09-19-
dc.identifier.citationInternational workshop on nitride semiconductor (IWN2010), v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/171996-
dc.languageENG-
dc.publisherInternational workshop on nitride semiconductor (IWN2010)-
dc.titleDislocation-free and strain-relaxed GaN nanorods formed by a thermal gas treatment-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameInternational workshop on nitride semiconductor (IWN2010)-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorKim, Je-hyung-
dc.contributor.nonIdAuthorOh, Chung-Seok-
dc.contributor.nonIdAuthorKo, Young-ho-
dc.contributor.nonIdAuthorKo, Suk-Min-
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PH-Conference Papers(학술회의논문)
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