DSpace at KOASAS: The effect of O-vacancy defects on device instability in amorphous In-Ga-Zn-O thin film transistors

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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

The effect of O-vacancy defects on device instability in amorphous In-Ga-Zn-O thin film transistors

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Noh, HK / Ryu, B. / Chang, Kee-Joo researcher

Publisher: ISPSA

Issue Date: 2011-07

Language: ENG

Citation: 15th International Symposium on the Physics of Semiconductors and Applications

URI: http://hdl.handle.net/10203/168368

Appears in Collection: PH-Conference Papers(학술회의논문)

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The effect of O-vacancy defects on device instability in amorphous In-Ga-Zn-O thin film transistors

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