DC Field | Value | Language |
---|---|---|
dc.contributor.author | Noh, HK | - |
dc.contributor.author | Ryu, B. | - |
dc.contributor.author | Chang, Kee-Joo | - |
dc.date.accessioned | 2013-03-29T02:48:03Z | - |
dc.date.available | 2013-03-29T02:48:03Z | - |
dc.date.created | 2012-04-06 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.citation | 15th International Symposium on the Physics of Semiconductors and Applications, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/168368 | - |
dc.language | ENG | - |
dc.publisher | ISPSA | - |
dc.title | The effect of O-vacancy defects on device instability in amorphous In-Ga-Zn-O thin film transistors | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 15th International Symposium on the Physics of Semiconductors and Applications | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Noh, HK | - |
dc.contributor.nonIdAuthor | Ryu, B. | - |
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