The effect of O-vacancy defects on device instability in amorphous In-Ga-Zn-O thin film transistors

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 328
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorNoh, HK-
dc.contributor.authorRyu, B.-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2013-03-29T02:48:03Z-
dc.date.available2013-03-29T02:48:03Z-
dc.date.created2012-04-06-
dc.date.issued2011-07-
dc.identifier.citation15th International Symposium on the Physics of Semiconductors and Applications, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/168368-
dc.languageENG-
dc.publisherISPSA-
dc.titleThe effect of O-vacancy defects on device instability in amorphous In-Ga-Zn-O thin film transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname15th International Symposium on the Physics of Semiconductors and Applications-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorNoh, HK-
dc.contributor.nonIdAuthorRyu, B.-
Appears in Collection
PH-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0