Nano-structural Characteristics of N-doped ZnO Thin films and Fabrication of Film Bulk Acoustic Resonator Devices

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Publisher
American Institute of Physics: International Conference on the Physics of Semiconductors(ICPS) 2010
Issue Date
2010-07
Language
English
Citation

International Conference on the Physics of Semiconductors(ICPS) 2010, pp.257 - 258

ISSN
0094-243x
DOI
http://dx.doi.org/10.1063/1.3666352
URI
http://hdl.handle.net/10203/166339
Appears in Collection
EE-Conference Papers(학술회의논문)
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