Nano-structural Characteristics of N-doped ZnO Thin films and Fabrication of Film Bulk Acoustic Resonator Devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Eunju | ko |
| dc.contributor.author | Zhang,Ruirui | ko |
| dc.contributor.author | Yoon, Giwan | ko |
| dc.date.accessioned | 2013-03-28T14:03:07Z | - |
| dc.date.available | 2013-03-28T14:03:07Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2010-07 | - |
| dc.identifier.citation | International Conference on the Physics of Semiconductors(ICPS) 2010, pp.257 - 258 | - |
| dc.identifier.issn | 0094-243x | - |
| dc.identifier.uri | http://hdl.handle.net/10203/166339 | - |
| dc.language | English | - |
| dc.publisher | American Institute of Physics: International Conference on the Physics of Semiconductors(ICPS) 2010 | - |
| dc.title | Nano-structural Characteristics of N-doped ZnO Thin films and Fabrication of Film Bulk Acoustic Resonator Devices | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000301053000114 | - |
| dc.identifier.scopusid | 2-s2.0-84862827424 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 257 | - |
| dc.citation.endingpage | 258 | - |
| dc.citation.publicationname | International Conference on the Physics of Semiconductors(ICPS) 2010 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Seoul | - |
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3666352 | - |
| dc.contributor.localauthor | Yoon, Giwan | - |
| dc.contributor.nonIdAuthor | Zhang,Ruirui | - |
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