A Comprehensive Modeling of Threshold Voltage with Consideration of Body Doping Concentration and Body Thickness in Double-Gate FinFETs

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Issue Date
2008-02
Language
KOR
Citation

The 15th Korean Conference on Semiconductors (KCS), pp.617 - 618

URI
http://hdl.handle.net/10203/159957
Appears in Collection
EE-Conference Papers(학술회의논문)
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