A Novel Capacitorless DRAM Operated by Gate-Induced Drain-Leakage (GIDL) for Improved Sensing Window and Low Power Operation

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Issue Date
2009-02
Language
KOR
Citation

The 16th Korean Conference on Semiconductors, pp.62 - 63

URI
http://hdl.handle.net/10203/159847
Appears in Collection
EE-Conference Papers(학술회의논문)
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