DSpace at KOASAS: NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications

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Kim, M.-S. / Jang, W.W. / Lee, J.-M. / Kim, S.-M. / Yun, E.-J. / Cho, K.-H. / Lee, S.-Y. / Choi, I.-H. / Yong / Yoon, Jun-Bo researcher / Kim, D.-W. / Park, D.

Issue Date: 2007-12-12

Language: ENG

Citation: 2007 International Semiconductor Device Research Symposium, ISDRS

URI: http://hdl.handle.net/10203/155610

Appears in Collection: EE-Conference Papers(학술회의논문)

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NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications

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