NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications

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dc.contributor.authorKim, M.-S.-
dc.contributor.authorJang, W.W.-
dc.contributor.authorLee, J.-M.-
dc.contributor.authorKim, S.-M.-
dc.contributor.authorYun, E.-J.-
dc.contributor.authorCho, K.-H.-
dc.contributor.authorLee, S.-Y.-
dc.contributor.authorChoi, I.-H.-
dc.contributor.authorYong-
dc.contributor.authorYoon, Jun-Bo-
dc.contributor.authorKim, D.-W.-
dc.contributor.authorPark, D.-
dc.date.accessioned2013-03-19T04:16:39Z-
dc.date.available2013-03-19T04:16:39Z-
dc.date.created2012-02-06-
dc.date.issued2007-12-12-
dc.identifier.citation2007 International Semiconductor Device Research Symposium, ISDRS, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/155610-
dc.languageENG-
dc.titleNEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications-
dc.typeConference-
dc.identifier.scopusid2-s2.0-44949151161-
dc.type.rimsCONF-
dc.citation.publicationname2007 International Semiconductor Device Research Symposium, ISDRS-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorYoon, Jun-Bo-
dc.contributor.nonIdAuthorKim, M.-S.-
dc.contributor.nonIdAuthorJang, W.W.-
dc.contributor.nonIdAuthorLee, J.-M.-
dc.contributor.nonIdAuthorKim, S.-M.-
dc.contributor.nonIdAuthorYun, E.-J.-
dc.contributor.nonIdAuthorCho, K.-H.-
dc.contributor.nonIdAuthorLee, S.-Y.-
dc.contributor.nonIdAuthorChoi, I.-H.-
dc.contributor.nonIdAuthorYong-
dc.contributor.nonIdAuthorKim, D.-W.-
dc.contributor.nonIdAuthorPark, D.-
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