DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, M.-S. | - |
dc.contributor.author | Jang, W.W. | - |
dc.contributor.author | Lee, J.-M. | - |
dc.contributor.author | Kim, S.-M. | - |
dc.contributor.author | Yun, E.-J. | - |
dc.contributor.author | Cho, K.-H. | - |
dc.contributor.author | Lee, S.-Y. | - |
dc.contributor.author | Choi, I.-H. | - |
dc.contributor.author | Yong | - |
dc.contributor.author | Yoon, Jun-Bo | - |
dc.contributor.author | Kim, D.-W. | - |
dc.contributor.author | Park, D. | - |
dc.date.accessioned | 2013-03-19T04:16:39Z | - |
dc.date.available | 2013-03-19T04:16:39Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-12-12 | - |
dc.identifier.citation | 2007 International Semiconductor Device Research Symposium, ISDRS, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/155610 | - |
dc.language | ENG | - |
dc.title | NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-44949151161 | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 2007 International Semiconductor Device Research Symposium, ISDRS | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Yoon, Jun-Bo | - |
dc.contributor.nonIdAuthor | Kim, M.-S. | - |
dc.contributor.nonIdAuthor | Jang, W.W. | - |
dc.contributor.nonIdAuthor | Lee, J.-M. | - |
dc.contributor.nonIdAuthor | Kim, S.-M. | - |
dc.contributor.nonIdAuthor | Yun, E.-J. | - |
dc.contributor.nonIdAuthor | Cho, K.-H. | - |
dc.contributor.nonIdAuthor | Lee, S.-Y. | - |
dc.contributor.nonIdAuthor | Choi, I.-H. | - |
dc.contributor.nonIdAuthor | Yong | - |
dc.contributor.nonIdAuthor | Kim, D.-W. | - |
dc.contributor.nonIdAuthor | Park, D. | - |
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