DSpace at KOASAS: Unusual 1/f Noise Behavior in MOSFETs with a sub-1.5 nm Gate Oxide under Electrical Stress

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Unusual 1/f Noise Behavior in MOSFETs with a sub-1.5 nm Gate Oxide under Electrical Stress

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Hong, Songcheol researcher / Mheen, Bongki / Song, Young-Joo / Kang, Jin-Young

Issue Date: 2004

Language: ENG

Citation: 27th International Conference on the Physics of Semiconductors

URI: http://hdl.handle.net/10203/148917

Appears in Collection: EE-Conference Papers(학술회의논문)

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Unusual 1/f Noise Behavior in MOSFETs with a sub-1.5 nm Gate Oxide under Electrical Stress

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