DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Jongin | ko |
dc.contributor.author | Song, Han Wook | ko |
dc.contributor.author | Hong, Daniel Seungbum | ko |
dc.contributor.author | Shin, Hyunjung | ko |
dc.contributor.author | No, Kwangsoo | ko |
dc.date.accessioned | 2007-09-19T02:29:45Z | - |
dc.date.available | 2007-09-19T02:29:45Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-12 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.92, no.12, pp.7434 - 7441 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1482 | - |
dc.description.abstract | Pb(Zr0.52Ti0.48)O-3 (PZT) thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrates at 375 degreesC by radio frequency magnetron sputtering. A mixture of (110) and (100) orientations was found in all the PZT thin films. However, the in-plane grain size increased with an increase in film thickness, all films had smooth surfaces, and the root mean square roughness of the PZT films was in the range of 1-1.5 nm. As the film thickness increased, a decrease in residual stress and volume density of the PZT films was observed. PZT films become poorly crystallized with a decrease in film thickness. The magnitude of the maximum displacement from atomic force microscopy in local piezoresponse hysteresis mode increased from 187.25+/-9.363 in 40 nm to 418.5+/-20.925 in 152 nm. We suggest that the degradation in piezoelectric properties with a decrease in film thickness resulted from degradation of the crystallinity observed using transmission electron microscopy analysis, size effects derived from the grain size, and the residual stress evaluated using a laser reflectance method. (C) 2002 American Institute of Physics. | - |
dc.description.sponsorship | This work was supported by the Ministry of Education (Brain Korea 21), the Ministry of Science and Technology (21C Frontier R&D Program), the Korean Science and Engineering Foundation (The Study of the Single Transistor FRAM), and the Institute of Information Technology Assessment (IITA) (No. 2001-163-2). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FERROELECTRIC THIN-FILMS | - |
dc.subject | SCANNING FORCE MICROSCOPY | - |
dc.subject | DIELECTRIC-PROPERTIES | - |
dc.subject | CAPACITORS | - |
dc.subject | STRESS | - |
dc.subject | POLARIZATION | - |
dc.subject | DEPENDENCE | - |
dc.subject | FIELD | - |
dc.title | Fabrication and investigation of ultrathin, and smooth Pb(Zr,Ti)O(3) films for miniaturization of microelectronic devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000179495100075 | - |
dc.identifier.scopusid | 2-s2.0-0037115683 | - |
dc.type.rims | ART | - |
dc.citation.volume | 92 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 7434 | - |
dc.citation.endingpage | 7441 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.1524307 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Hong, Daniel Seungbum | - |
dc.contributor.localauthor | No, Kwangsoo | - |
dc.contributor.nonIdAuthor | Song, Han Wook | - |
dc.contributor.nonIdAuthor | Shin, Hyunjung | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FERROELECTRIC THIN-FILMS | - |
dc.subject.keywordPlus | SCANNING FORCE MICROSCOPY | - |
dc.subject.keywordPlus | DIELECTRIC-PROPERTIES | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | FIELD | - |
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