Characterization of (Bi, Ce, La)4Ti3O12 thin film ofr FRAM capacitor prepared by combinatorial liquid source misted chemical deposition (LSMCD) process

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Issue Date
2004-01
Language
ENG
Citation

2nd combinatorial & high throughput materials science in gordon conference, pp.25 - 30

URI
http://hdl.handle.net/10203/139619
Appears in Collection
CBE-Conference Papers(학술회의논문)
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