Real-time direct observation of temperature-dependent domain reversal behavior in epitaxial MnAs film on GaAs(001)

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We have investigated temperature-dependent domain reversal behavior in the MnAs film epitaxially grown on GaAs(001) using a magneto-optical microscope capable of real-time direct observation of domain evolution. Interestingly enough, the domain reversal in the temperature range of 20 degrees C similar to 35 degrees C shows the domain wall-motion process with the sawtooth type and, then, it changes to the nucleation-dominant process above 37.5 degrees C. This change could be understood by the decrease of the dipolar interaction energy and the disconnection of the ferromagnetic alpha-MnAs stripes, induced by the decrease of the alpha-MnAs volume ratio with increasing temperature. (c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-03
Language
English
Article Type
Article
Keywords

THIN-FILMS; GAAS; MICROSCOPY; STRAIN; WALLS

Citation

APPLIED PHYSICS LETTERS, v.88, pp.119 - 119

ISSN
0003-6951
DOI
10.1063/1.2189016
URI
http://hdl.handle.net/10203/13951
Appears in Collection
RIMS Journal Papers
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