High velocity N-on and N-off modulation doped GaAs/AlxGal-xAs FETs

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Publisher
IEEE
Issue Date
1982
Language
ENG
Citation

Proceedings of International Electron Device Meeting, v.28, pp.586 - 589

URI
http://hdl.handle.net/10203/13766
Appears in Collection
EE-Conference Papers(학술회의논문)
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