High velocity N-on and N-off modulation doped GaAs/AlxGal-xAs FETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Drummond, T. J. | - |
| dc.contributor.author | Su, S. L. | - |
| dc.contributor.author | Kopp, W. | - |
| dc.contributor.author | Fisher, R. | - |
| dc.contributor.author | Thorne, R. E. | - |
| dc.contributor.author | Morkoc, H. | - |
| dc.contributor.author | Lee, Kwyro | - |
| dc.contributor.author | Shur, N. S. | - |
| dc.date.accessioned | 2009-12-01T02:38:46Z | - |
| dc.date.available | 2009-12-01T02:38:46Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1982 | - |
| dc.identifier.citation | Proceedings of International Electron Device Meeting, v.28, no., pp.586 - 589 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/13766 | - |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | High velocity N-on and N-off modulation doped GaAs/AlxGal-xAs FETs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.volume | 28 | - |
| dc.citation.beginningpage | 586 | - |
| dc.citation.endingpage | 589 | - |
| dc.citation.publicationname | Proceedings of International Electron Device Meeting | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | Drummond, T. J. | - |
| dc.contributor.nonIdAuthor | Su, S. L. | - |
| dc.contributor.nonIdAuthor | Kopp, W. | - |
| dc.contributor.nonIdAuthor | Fisher, R. | - |
| dc.contributor.nonIdAuthor | Thorne, R. E. | - |
| dc.contributor.nonIdAuthor | Morkoc, H. | - |
| dc.contributor.nonIdAuthor | Shur, N. S. | - |
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