Organic-inorganic hybrid gate dielectrics for low-voltage pentacene organic thin film transistors

Abstract

Organic thin film transistors (OTFTs) for low-voltage operation have been realized with very thin organic-inorganic hybrid gate dielectrics. Organic-inorganic hybrid thin films have good electrical properties, including high dielectric strength and low leakage current density down to 40 nm thickness. In addition, organic-inorganic hybrid thin films have smooth and hydrophobic surface. OTFTS with 40-nm-thick organic-inorganic hybrid dielectrics are operating within -5V and exhibit a mobility of 0.3 cm(2)/(Vs). a threshold voltage of -2.6V, and a small subthreshold swing of 0.43 V/decade. In addition, OTFTs with 40-nm-thick organic-inorganic hybrid dielectrics have low hysteresis. (C) 2009 Elsevier B.V. All rights reserved.