DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이희철 | - |
dc.contributor.author | 장병탁 | - |
dc.contributor.author | 차선용 | - |
dc.date.accessioned | 2013-03-16T21:07:32Z | - |
dc.date.available | 2013-03-16T21:07:32Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | 제6회 한국반도체 학술대회, v., no., pp.239 - 240 | - |
dc.identifier.uri | http://hdl.handle.net/10203/135872 | - |
dc.language | KOR | - |
dc.title | A Novel Procedure for Circuit Modeling of Dielectric Relaxation of (Ba,Sr)TiO3 Thin Film Capacitor and Its Effect on DRAM Operation | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 239 | - |
dc.citation.endingpage | 240 | - |
dc.citation.publicationname | 제6회 한국반도체 학술대회 | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | 이희철 | - |
dc.contributor.nonIdAuthor | 장병탁 | - |
dc.contributor.nonIdAuthor | 차선용 | - |
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