DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wee, H | ko |
dc.contributor.author | Lee, C | ko |
dc.contributor.author | Shin, Sung-Chul | ko |
dc.date.accessioned | 2009-11-26T05:19:29Z | - |
dc.date.available | 2009-11-26T05:19:29Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-11 | - |
dc.identifier.citation | THIN SOLID FILMS, v.376, no.1-2, pp.38 - 46 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/13420 | - |
dc.description.abstract | The microstructure and growth mechanisms of mixed-phase silicon films deposited on glass substrates by infra-low pressure chemical vapor deposition and low pressure chemical vapor deposition using 20% Si2H6/He gas have been investigated by X-ray diffraction and cross-section transmission electron microscopy. The deposition temperature and pressure were in the range of 560-600 degreesC and below 10 mtorr, respectively. In mixed-phase films, there were two kinds of crystallites: initially deposited pre-existing small irregular (311)-preferred crystallites and conventionally incubated (111)-preferred large elliptic bulk-induced crystallites. The behavior of the former changed depending on the deposition conditions of temperature and pressure. Just above the deposition rate below which a (110) polysilicon film formed, (311)-preferred quasi-columnar growth occurred by surface-induced crystallization. This quasi-columnar growth preserved or strengthened the initial (311) preference and grew with an activation energy of 3.1 eV. A further increase of deposition rate made it difficult to form quasi-columnar growth due to a smaller nucleation density and because surface-induced crystallization was suppressed. Then conventional bulk-induced crystallization became dominant to form a (111) preferred mixed-phase films. (C) 2000 Elsevier Science S.A. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | LPCVD POLYCRYSTALLINE SILICON | - |
dc.subject | PHYSICAL-PROPERTIES | - |
dc.subject | THIN-FILMS | - |
dc.subject | TRANSISTORS | - |
dc.subject | DISILANE | - |
dc.subject | TRANSFORMATION | - |
dc.subject | PYROLYSIS | - |
dc.title | Growth mechanisms of crystallites in the mixed-phase silicon films deposited by low-pressure chemical vapor deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000165207400007 | - |
dc.identifier.scopusid | 2-s2.0-0034317208 | - |
dc.type.rims | ART | - |
dc.citation.volume | 376 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 38 | - |
dc.citation.endingpage | 46 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Shin, Sung-Chul | - |
dc.contributor.nonIdAuthor | Wee, H | - |
dc.contributor.nonIdAuthor | Lee, C | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | polysilicon | - |
dc.subject.keywordAuthor | crystallization | - |
dc.subject.keywordAuthor | mixed-phase | - |
dc.subject.keywordPlus | LPCVD POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | PHYSICAL-PROPERTIES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DISILANE | - |
dc.subject.keywordPlus | TRANSFORMATION | - |
dc.subject.keywordPlus | PYROLYSIS | - |
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