DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chae, Junghun | ko |
dc.contributor.author | Park, Hyuong-Sang | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2007-09-04T06:53:49Z | - |
dc.date.available | 2007-09-04T06:53:49Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-06 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.5, no.6, pp.C64 - C66 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1283 | - |
dc.description.abstract | A thin film of elementary nickel was formed by atomic layer deposition (ALD). The deposition cycle consisted of two consecutive chemical reaction steps: an oxidizing step and a reducing step. An atomic layer of nickel oxide was made by sequentially supplying bis(cyclopentadienyl)-nickel as a nickel precursor and water as an oxidation agent; the preformed atomic layer of nickel oxide was then reduced to elementary nickel metal by exposure to hydrogen radical at a deposition temperature of 165degrees C. Auger electron spectroscopy analysis detected negligible oxygen content in the grown films, indicating that the hydrogen radical had completely reduced the nickel oxide to a metallic thin film. In addition, carbon impurities in the film dropped from 16 atom % to less than 5 atom % during the reduction reaction. The proposed two-step ALD method for elementary metals was successful in forming continuous and conformal nickel thin films. These nickel films formed an effective glue layer between chemical vapor deposited copper and a diffusion barrier layer of TiN. The adhesion of a 1 mum thick copper film to a 15 nm thick nickel glue layer over a TiN barrier film was excellent, with no failures occurring during adhesive tape peel tests. (C) 2002 The Electrochemical Society. | - |
dc.description.sponsorship | We acknowledge the support of this research by the Ministry of Science and Technology of Korea, through the National Research Laboratory Program. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Atomic layer deposition of nickel by the reduction of preformed nickel oxide | - |
dc.type | Article | - |
dc.identifier.wosid | 000175315800014 | - |
dc.identifier.scopusid | 2-s2.0-0036000908 | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | C64 | - |
dc.citation.endingpage | C66 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.identifier.doi | 10.1149/1.1475199 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Chae, Junghun | - |
dc.contributor.nonIdAuthor | Park, Hyuong-Sang | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | CU | - |
dc.subject.keywordPlus | NI | - |
dc.subject.keywordPlus | TI | - |
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