Measurement of thermal expansion coefficient of poly-Si using microgauge sensors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chae, Jung-Hun | - |
| dc.contributor.author | Lee, Jae-Youl | - |
| dc.contributor.author | Kang, Sang-Won | - |
| dc.date.accessioned | 2007-09-04T01:13:13Z | - |
| dc.date.available | 2007-09-04T01:13:13Z | - |
| dc.date.issued | 1997 | - |
| dc.identifier.citation | SPIE Vol. 3242, pp.202-211 | en |
| dc.identifier.issn | 0277-786X | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1270 | - |
| dc.description.abstract | Thermal expansion coefficient of heavily doped LPCVD polycrystalline (poly-Si) thin film was extracted by microgauge sensors. When electrical power was applied to the microgauge, it was heated up and thermal expansion occurred. From the relation between applied current and measured displacement at the microgauge, thermal expansion coefficient of thin film was extracted. The results revealed a value of 2.9x106 /K of thermal expansion coefficient of highly doped poly-Si thin films with standard deviation ofO.24x106 /K. | en |
| dc.language.iso | en_US | en |
| dc.publisher | International Society for Optical Engineering (SPIE) | en |
| dc.subject | thermal expansion coefficient | en |
| dc.subject | microgauge | en |
| dc.subject | MEMS | en |
| dc.subject | thin film | en |
| dc.title | Measurement of thermal expansion coefficient of poly-Si using microgauge sensors | en |
| dc.type | Article | en |
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