Microstructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures
- Publisher
- KCS
- Issue Date
- 2001-02
- Language
- Korean
- Citation
제8회 한국반도체학술대회, pp.579 - 580
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.