Microstructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures

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dc.contributor.author이정용ko
dc.date.accessioned2013-03-16T02:53:56Z-
dc.date.available2013-03-16T02:53:56Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-02-
dc.identifier.citation제8회 한국반도체학술대회, pp.579 - 580-
dc.identifier.urihttp://hdl.handle.net/10203/126693-
dc.languageKorean-
dc.publisherKCS-
dc.titleMicrostructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures-
dc.typeConference-
dc.identifier.scopusid2-s2.0-0036002425-
dc.type.rimsCONF-
dc.citation.beginningpage579-
dc.citation.endingpage580-
dc.citation.publicationname제8회 한국반도체학술대회-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationCOEX 컨벤션센터-
dc.contributor.localauthor이정용-
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MS-Conference Papers(학술회의논문)
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