Effects of the addition of CF4, Cl2, and N2 to O2 ECR plasma on the etch rate, selectivity, and etched profile of RuO2 film

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Issue Date
1997-11-30
Language
ENG
Citation

Proceedings of the 1997 MRS Fall Symposium, v.493, pp.183 - 188

ISSN
0272-9172
URI
http://hdl.handle.net/10203/118240
Appears in Collection
MS-Conference Papers(학술회의논문)
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