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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Effects of the addition of CF4, Cl2, and N2 to O2 ECR plasma on the etch rate, selectivity, and etched profile of RuO2 film

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dc.contributor.authorLee, EJ-
dc.contributor.authorKim, JS-
dc.contributor.authorKim, JW-
dc.contributor.authorBaik, KH-
dc.contributor.authorLee, Won-Jong-
dc.date.accessioned2013-03-15T09:25:11Z-
dc.date.available2013-03-15T09:25:11Z-
dc.date.created2012-02-06-
dc.date.issued1997-11-30-
dc.identifier.citationProceedings of the 1997 MRS Fall Symposium, v.493, no., pp.183 - 188-
dc.identifier.issn0272-9172-
dc.identifier.urihttp://hdl.handle.net/10203/118240-
dc.languageENG-
dc.titleEffects of the addition of CF4, Cl2, and N2 to O2 ECR plasma on the etch rate, selectivity, and etched profile of RuO2 film-
dc.typeConference-
dc.identifier.scopusid2-s2.0-0031674190-
dc.type.rimsCONF-
dc.citation.volume493-
dc.citation.beginningpage183-
dc.citation.endingpage188-
dc.citation.publicationnameProceedings of the 1997 MRS Fall Symposium-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorLee, Won-Jong-
dc.contributor.nonIdAuthorLee, EJ-
dc.contributor.nonIdAuthorKim, JS-
dc.contributor.nonIdAuthorKim, JW-
dc.contributor.nonIdAuthorBaik, KH-
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MS-Conference Papers(학술회의논문)
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