Synthesis and lithographic evaluation of poly [(methaerylic acid tert-butyl cholate ester)-co-(-gamma-butyrolactone-2-yl methacrylate)]

Abstract

Poly [(methacrylic acid tert-butyl cholate ester)-co-(gamma-butyrolactone-2-yl methacrylate)] was synthesized and evaluated as a new 193-nm chemically amplified photoresist. This polymer showed good thermal stability up to 240 degreesC and had a good transmittance at 193 nm. This material showed good resistance to CF4-reactive ion etching. The resist patterns of 0.15 mum feature size were obtained at a dose of 11 mJ cm(-2) using an argon fluoride excimer laser stepper. (C) 2004 Published by Elsevier Ltd.