Unizxial Stress Dependent I-V Characteristics of GaAs-AlxGa1-xGaAs Single Tunnel Barrier at 77K

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Issue Date
1989
Language
ENG
Citation

Proc. of 4th Int. Conf. on Modulation Doped Semiconductor Structures, pp.671 - 676

URI
http://hdl.handle.net/10203/113674
Appears in Collection
EE-Conference Papers(학술회의논문)
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