Unizxial Stress Dependent I-V Characteristics of GaAs-AlxGa1-xGaAs Single Tunnel Barrier at 77K

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dc.contributor.authorLee, Kwyro-
dc.contributor.authorLu, S.S.-
dc.contributor.authorNathan, M.I.-
dc.contributor.authorHeiblum, M.-
dc.contributor.authorWright, S.L.-
dc.date.accessioned2013-03-14T21:48:48Z-
dc.date.available2013-03-14T21:48:48Z-
dc.date.created2012-02-06-
dc.date.issued1989-
dc.identifier.citationProc. of 4th Int. Conf. on Modulation Doped Semiconductor Structures, v., no., pp.671 - 676-
dc.identifier.urihttp://hdl.handle.net/10203/113674-
dc.languageENG-
dc.titleUnizxial Stress Dependent I-V Characteristics of GaAs-AlxGa1-xGaAs Single Tunnel Barrier at 77K-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage671-
dc.citation.endingpage676-
dc.citation.publicationnameProc. of 4th Int. Conf. on Modulation Doped Semiconductor Structures-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorLu, S.S.-
dc.contributor.nonIdAuthorNathan, M.I.-
dc.contributor.nonIdAuthorHeiblum, M.-
dc.contributor.nonIdAuthorWright, S.L.-
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EE-Conference Papers(학술회의논문)
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