TEM study of the GaAs/Si system grown by 2-step MBE/SPE method

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Issue Date
1993
Language
ENG
Citation

Microsc. Semicond. Mat. conforence, April 5-8, Oxford, Inst. Phys. Conf. series 134, pp.357 - 360

URI
http://hdl.handle.net/10203/112476
Appears in Collection
MS-Conference Papers(학술회의논문)
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