TEM study of the GaAs/Si system grown by 2-step MBE/SPE method

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dc.contributor.authorChoo, Woong Kil-
dc.date.accessioned2013-03-14T19:37:31Z-
dc.date.available2013-03-14T19:37:31Z-
dc.date.created2012-02-06-
dc.date.issued1993-
dc.identifier.citationMicrosc. Semicond. Mat. conforence, April 5-8, Oxford, Inst. Phys. Conf. series 134, v., no., pp.357 - 360-
dc.identifier.urihttp://hdl.handle.net/10203/112476-
dc.languageENG-
dc.titleTEM study of the GaAs/Si system grown by 2-step MBE/SPE method-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage357-
dc.citation.endingpage360-
dc.citation.publicationnameMicrosc. Semicond. Mat. conforence, April 5-8, Oxford, Inst. Phys. Conf. series 134-
dc.contributor.localauthorChoo, Woong Kil-
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MS-Conference Papers(학술회의논문)
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