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Showing results 1 to 12 of 12

1
Ab initio study of boron segregation and deactivation at Si/SiO2 interface

Oh, Young-Jun; Hwang, Jin-Heui; Noh, Hyeon-Kyun; Bang, Jun-Hyeok; Ryu, Byung-Ki; Chang, Kee-Joo, MICROELECTRONIC ENGINEERING, v.89, pp.120 - 123, 2012-01

2
Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces

Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03

3
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Noh, Hyeon-Kyun; Oh, Young-Jun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2907 - 2910, 2012-08

4
First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2

Oh, Young-Jun; Noh, Hyeon-Kyun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2989 - 2992, 2012-08

5
Hybrid functional and quasiparticle calculations of the Schottky barrier height at TiN/HfO2 interface

Oh, Young-Jun; Lee, Alex Taekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03

6
Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO2 interface

Oh, Young-Jun; Lee, Alex Taekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, PHYSICAL REVIEW B, v.87, no.7, pp.075325, 2013-02

7
Migration Pathways and Barrier for B diffusion in SiO2 and SiGe/SiO2 interfaces

Chang, Kee-Joo; Oh, Young-Jun; Lee, Chang Hwi, The 17th International Symposium Physics of semiconductors and Applications, ISPSA, 2014-12-10

8
Migration Pathways and Barriers for B diffusion at Si/SiO2 and SiGe/SiO2 Interface

Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 32nd International Conference on the Physics of Semiconductors, ICPS, 2014-08

9
Role of Oxygen-Related Defects in the Instability of Amorphous In-Ga-Zn-O Thin FlimTransistor

Oh, Young-Jun; HAN, WOOHYUN; Noh, Hyeon-Kyun; Chang, Kee-Joo, 32nd International Conference on the Physics of Semiconductors, ICPS, 2014-08

10
The effects of C and F impurities on the Schottky barrier height and effective work function at TiN/HfO2 interface

Kim, Geun Myeong; Oh, Young-Jun; Chang, Kee-Joo, The 17th Asian Workshop on First-Principles Electronic Structure Calculations, KIAS, 2014-11-05

11
The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors

HAN, WOOHYUN; Oh, Young-Jun; Chang, Kee-Joo, The 17th International Symposium Physics of semiconductors and Applications, ISPSA, 2014-12-08

12
The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors

HAN, WOOHYUN; Oh, Young-Jun; Chang, Kee-Joo, The 17th Asian Workshop on First-Principles Electronic Structure Calculations, KIAS, 2014-11-05

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