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Showing results 1 to 12 of 12

1
A medium energy ion scattering analysis of the Si-SiO2 interface formed by ion beam oxidation of silicon

Kim, YP; Choi, Si-Kyung; Ha, YH; Kim, Sehun; Kim, HK; Moon, DW, APPLIED SURFACE SCIENCE, v.117, pp.207 - 211, 1997-06

2
Comparison of the effective oxide thickness determined by ellipsometry with the result by medium energy ion scattering spectroscopy and high-resolution transmission electron microscopy

Cho, HM; Lee, YW; Lee, IW; Moon, DW; Kim, BY; Kim, HJ; Kim, Byoung Yoon; et al, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.19, no.4, pp.1144 - 1149, 2001

3
Er-carrier interaction and its effects on the Er3+ luminescence of erbium-doped Si/SiO2 superlattices

Shin, JungHoon; Jhe, JH; Seo, SY; Ha, YH; Moon, DW, APPLIED PHYSICS LETTERS, v.76, no.24, pp.3567 - 3569, 2000-06

4
Hydrogen-surfactant mediated growth of Ge on Si(001)

Kahng, SJ; Ha, YH; Park, JY; Kim, Sehun; Moon, DW; Kuk, Y, PHYSICAL REVIEW LETTERS, v.80, no.22, pp.4931 - 4934, 1998-06

5
In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property

Kim, KJ; Moon, DW; Hong, SH; Choi, SH; Yang, MS; Jhe, JH; Shin, JungHoon, THIN SOLID FILMS, v.478, pp.21 - 24, 2005-05

6
Influence of sub-nm scale dimensional control on the Er3+ luminescence properties of Er-dopedSi/SiO2 superlattices

Jhe, JH; Shin, JungHoon; Ha, YH; Moon, DW, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.176 - 180, 2001-12

7
Low sputter damage of metal single crystalline surfaces investigated with medium energy ion scattering spectroscopy

Moon, DW; Ha, YH; Kim, HK; Kim, KJ; Kim, HS; Lee, JeongYong; Kim, Sehun, APPLIED SURFACE SCIENCE, v.150, no.1-4, pp.235 - 243, 1999-08

8
Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading

Cho, MH; Moon, P; Kim, HJ; Na, H; Seo, HC; Shin, Y; Moon, DW; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.201, pp.2818 - 2822, 2004-09

9
Quantitative analysis of mixed self-assembled monolayers using ToF-SIMS

Min, H; Jung, G; Moon, DW; Choi, Insung; Lee, TG, APPLIED SURFACE SCIENCE, v.255, no.4, pp.1037 - 1039, 2008-12

10
Relaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O

Ha, YH; Kim, Sehun; Lee, SY; Kim, JH; Baek, DH; Kim, HK; Moon, DW, APPLIED PHYSICS LETTERS, v.74, no.23, pp.3510 - 3512, 1999-06

11
The electronic energy loss of 100 keV heavy ions in medium energy ion scattering analysis of a Ta2O5 ultrathin film

Moon, DW; Kim, HK; Kim, YP; Ha, YH; Choi, Si-Kyung; Kim, Sehun, NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.125, no.1-4, pp.120 - 123, 1997-04

12
Time-of-flight secondary ion mass spectrometry chemical imaging analysis of micropatterns of streptavidin and cells without labeling

Shon, HK; Lee, KB; Kim, J; Choi, Insung; Moon, DW; Lee, TG, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.24, no.4, pp.1203 - 1207, 2006-07

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