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Showing results 1 to 8 of 8

1
Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces

Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03

2
Schottky barrier heights and effective work functions at various TiAlN/HfO2 interface

김근명; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04

3
The effect of Al atoms on the effective work function at TiN/HfO2 interface

Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, The 19th Asian Workshop on First-Principles Electronic Structure Calculations, National Chiao Tung University, 2016-11

4
The effect of Al impurities on the effective work function at metal/HfO2 interfaces

Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 2015 28th International Conference on Defects in Semiconductors, ICDS, 2015-07

5
The effect of Si impurities on the effective work function at TiN/t-HfO2 interface

Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 제12회 고등과학원 전자구조 계산학회, KIAS, 2016-06

6
The effect of Si impurities on the Schottky barrier height and effective work function at TiN/t-HfO2 interface

김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2015-10

7
The effect of Si impurities on the Schottky barrier height at TiN/tetragonal-HfO2 interface

Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, The 18th Asian Workshop on First-Principles Electronic Structure Calculations, ISSP, 2015-11

8
The effects of C and F impurities on the Schottky barrier height at TiN/HfO2 interface

김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2014-10

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