Browse "College of Natural Sciences(자연과학대학)" by Author 20107131
Showing results 1 to 20 of 20
| Ab initio materials design using conformational space annealing and its applications to optical materials Lee, In Ho; Oh, Young Jun; Kim, Sunghyun; Lee, Jooyoung; Chang, Kee Joo, NANO KOREA 2016 Symposium, 나노코리아 조직위원회, 2016-07 |
| Atomic and electronic structure of non-stoichiometric amorphous In-Ga-Zn-O semiconductors 한우현; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2015-10 |
| Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03 |
| Computational design of direct band gap carbon superlattices with efficient optical transition Kim, Sunghyun; Oh, Young Jun; Lee, In Ho; Lee, Jooyoung; Chang, Kee Joo, The 19th Asian Workshop on First-Principles Electronic Structure Calculations, National Chiao Tung University, 2016-11 |
| Computational design of silicon allotropes with direct band gaps 오영준; 이인호; 이주영; 김성현; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04 |
| Computational Design of Silicon Allotropes with Direct Band Gaps Kim, Sung Hyun; Oh, Young Jun; Lee, In Ho; Lee, Joo Young; Chang, Kee Joo, The 3rd International Conference on Advanced Electromaterials, ICAE, 2015-11 |
| Computational discovery of direct band gap silicon superlattices with efficient optical transition Kim, Sunghyun; Oh, Young Jun; Lee, In Ho; Lee, Jooyoung; Chang, Kee Joo, 33rd International Conference on the Physics of Semiconductors, Peking University, 2016-08 |
| Computational search for dipole‐allowed direct band gap silicon allotropes based on global optimization Kim, Sunghyun; Oh, Young Jun; Lee, In Ho; Lee, Jooyoung; Chang, Kee Joo, The 18th International Symposium on the Physics of Semiconductors and Applications, 한국물리학회, 2016-07 |
| Computational search for direct band gap carbon allotropes with efficient optical transition Oh, Young Jun; Kim, Sunghyun; Lee, In Ho; Lee, Joo Young; Chang, Kee Joo, 2016 봄학술논문발표회 및 제92회 정기총회, 한국물리학회, 2016-04 |
| Hybrid functional and quasiparticle calculations of the Schottky barrier height at TiN/HfO2 interface Oh, Young-Jun; Lee, Alex Taekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03 |
| Schottky barrier heights and effective work functions at various TiAlN/HfO2 interface 김근명; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04 |
| The effect of Al atoms on the effective work function at TiN/HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, The 19th Asian Workshop on First-Principles Electronic Structure Calculations, National Chiao Tung University, 2016-11 |
| The effect of Al impurities on the effective work function at metal/HfO2 interfaces Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 2015 28th International Conference on Defects in Semiconductors, ICDS, 2015-07 |
| The effect of Si impurities on the effective work function at TiN/t-HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, 제12회 고등과학원 전자구조 계산학회, KIAS, 2016-06 |
| The effect of Si impurities on the Schottky barrier height and effective work function at TiN/t-HfO2 interface 김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2015-10 |
| The effect of Si impurities on the Schottky barrier height at TiN/tetragonal-HfO2 interface Kim, Geun Myeong; Oh, Young Jun; Chang, Kee Joo, The 18th Asian Workshop on First-Principles Electronic Structure Calculations, ISSP, 2015-11 |
| The effects of C and F impurities on the Schottky barrier height at TiN/HfO2 interface 김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2014-10 |
| The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors 한우현; 오영준; 장기주, The 10th KIAS Electronic Structure Calculation Workshop, KIAS, 2014-06 |
| The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors 한우현; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2014-04 |
| The electronic properties of oxygen-related defects in amorphous In-Ga-Zn-O semiconductor 한우현; 오영준; 장기주, 제 10회 강유전체연합 심포지엄, 강유전체연구회, 2014-02 |
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