Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling

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dc.contributor.authorYoo, Jung Hoko
dc.contributor.authorYang, Jun-Moko
dc.contributor.authorUlugbek, Shaislamovko
dc.contributor.authorAhn, Chi Wonko
dc.contributor.authorHwang, Wook-Jungko
dc.contributor.authorPark, Joong Keunko
dc.contributor.authorPark, Chul Minko
dc.contributor.authorHong, Daniel Seungbumko
dc.contributor.authorKim, Joong Jungko
dc.contributor.authorShindo, Daisukeko
dc.date.accessioned2009-08-25T08:37:08Z-
dc.date.available2009-08-25T08:37:08Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-01-
dc.identifier.citationJOURNAL OF ELECTRON MICROSCOPY, v.57, no.1, pp.13 - 18-
dc.identifier.issn0022-0744-
dc.identifier.urihttp://hdl.handle.net/10203/10768-
dc.description.abstractThe visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, Delta Vp- n, by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, Delta Vp- n was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography.-
dc.description.sponsorshipThis research was supported by a grant (code 05K1501-01210) from the ‘Center for Nanostructure Materials Technology’ under ‘21st Century Frontier R&D Programs’ of the Ministry of Science and Technology, Korea.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherOXFORD UNIV PRESS-
dc.subjectTRANSISTORS-
dc.subjectBEAM-
dc.titleElectron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling-
dc.typeArticle-
dc.identifier.wosid000252907000003-
dc.identifier.scopusid2-s2.0-38849205467-
dc.type.rimsART-
dc.citation.volume57-
dc.citation.issue1-
dc.citation.beginningpage13-
dc.citation.endingpage18-
dc.citation.publicationnameJOURNAL OF ELECTRON MICROSCOPY-
dc.identifier.doi10.1093/jmicro/dfm037-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorPark, Joong Keun-
dc.contributor.localauthorHong, Daniel Seungbum-
dc.contributor.nonIdAuthorYoo, Jung Ho-
dc.contributor.nonIdAuthorYang, Jun-Mo-
dc.contributor.nonIdAuthorUlugbek, Shaislamov-
dc.contributor.nonIdAuthorAhn, Chi Won-
dc.contributor.nonIdAuthorHwang, Wook-Jung-
dc.contributor.nonIdAuthorPark, Chul Min-
dc.contributor.nonIdAuthorKim, Joong Jung-
dc.contributor.nonIdAuthorShindo, Daisuke-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorelectron holography-
dc.subject.keywordAuthorquantitative analysis of 2D dopant profile-
dc.subject.keywordAuthorbackside ion milling-
dc.subject.keywordAuthorp-n junction-
dc.subject.keywordAuthorelectron energy-loss spectroscopy-
dc.subject.keywordAuthorfocused ion beam-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusBEAM-
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