DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, Jung Ho | ko |
dc.contributor.author | Yang, Jun-Mo | ko |
dc.contributor.author | Ulugbek, Shaislamov | ko |
dc.contributor.author | Ahn, Chi Won | ko |
dc.contributor.author | Hwang, Wook-Jung | ko |
dc.contributor.author | Park, Joong Keun | ko |
dc.contributor.author | Park, Chul Min | ko |
dc.contributor.author | Hong, Daniel Seungbum | ko |
dc.contributor.author | Kim, Joong Jung | ko |
dc.contributor.author | Shindo, Daisuke | ko |
dc.date.accessioned | 2009-08-25T08:37:08Z | - |
dc.date.available | 2009-08-25T08:37:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-01 | - |
dc.identifier.citation | JOURNAL OF ELECTRON MICROSCOPY, v.57, no.1, pp.13 - 18 | - |
dc.identifier.issn | 0022-0744 | - |
dc.identifier.uri | http://hdl.handle.net/10203/10768 | - |
dc.description.abstract | The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, Delta Vp- n, by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, Delta Vp- n was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography. | - |
dc.description.sponsorship | This research was supported by a grant (code 05K1501-01210) from the ‘Center for Nanostructure Materials Technology’ under ‘21st Century Frontier R&D Programs’ of the Ministry of Science and Technology, Korea. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | OXFORD UNIV PRESS | - |
dc.subject | TRANSISTORS | - |
dc.subject | BEAM | - |
dc.title | Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling | - |
dc.type | Article | - |
dc.identifier.wosid | 000252907000003 | - |
dc.identifier.scopusid | 2-s2.0-38849205467 | - |
dc.type.rims | ART | - |
dc.citation.volume | 57 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 13 | - |
dc.citation.endingpage | 18 | - |
dc.citation.publicationname | JOURNAL OF ELECTRON MICROSCOPY | - |
dc.identifier.doi | 10.1093/jmicro/dfm037 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Park, Joong Keun | - |
dc.contributor.localauthor | Hong, Daniel Seungbum | - |
dc.contributor.nonIdAuthor | Yoo, Jung Ho | - |
dc.contributor.nonIdAuthor | Yang, Jun-Mo | - |
dc.contributor.nonIdAuthor | Ulugbek, Shaislamov | - |
dc.contributor.nonIdAuthor | Ahn, Chi Won | - |
dc.contributor.nonIdAuthor | Hwang, Wook-Jung | - |
dc.contributor.nonIdAuthor | Park, Chul Min | - |
dc.contributor.nonIdAuthor | Kim, Joong Jung | - |
dc.contributor.nonIdAuthor | Shindo, Daisuke | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | electron holography | - |
dc.subject.keywordAuthor | quantitative analysis of 2D dopant profile | - |
dc.subject.keywordAuthor | backside ion milling | - |
dc.subject.keywordAuthor | p-n junction | - |
dc.subject.keywordAuthor | electron energy-loss spectroscopy | - |
dc.subject.keywordAuthor | focused ion beam | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | BEAM | - |
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