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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Journal Papers(저널논문)

Top-Down Processed Silicon Nanowires for Thermoelectric Applications

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dc.contributor.authorJang, Moongyuko
dc.contributor.authorPark, Youngsamko
dc.contributor.authorHyun, Younghoonko
dc.contributor.authorJun, Myungsimko
dc.contributor.authorChoi, Sung-Jinko
dc.contributor.authorZyung, Taehyungko
dc.contributor.authorKim, Jong-Daeko
dc.date.accessioned2013-03-13T02:40:13Z-
dc.date.available2013-03-13T02:40:13Z-
dc.date.created2012-08-23-
dc.date.created2012-08-23-
dc.date.issued2012-04-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.4, pp.3552 - 3554-
dc.identifier.issn1533-4880-
dc.identifier.urihttp://hdl.handle.net/10203/104273-
dc.description.abstract50 nm wide n-type silicon nanowires have been manufactured by using a top-down process in order to investigate the thermoelectric properties of silicon nanowire. Nanowire test structures with platinum heaters and temperature sensors were fabricated. The extracted temperature coefficient of resistance (TCR) of the temperature sensors was 786.6 PPM/K. Also, the extracted Seebeck coefficient and power factor of the 50 nm wide phosphorus doped n-type silicon nanowires were -118 mu V/K and 2.16 mW.K-2.m(-1).-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectFIGURE-
dc.subjectMERIT-
dc.titleTop-Down Processed Silicon Nanowires for Thermoelectric Applications-
dc.typeArticle-
dc.identifier.wosid000305850900117-
dc.identifier.scopusid2-s2.0-84863303265-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue4-
dc.citation.beginningpage3552-
dc.citation.endingpage3554-
dc.citation.publicationnameJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.identifier.doi10.1166/jnn.2012.5580-
dc.contributor.localauthorChoi, Sung-Jin-
dc.contributor.nonIdAuthorJang, Moongyu-
dc.contributor.nonIdAuthorPark, Youngsam-
dc.contributor.nonIdAuthorHyun, Younghoon-
dc.contributor.nonIdAuthorJun, Myungsim-
dc.contributor.nonIdAuthorZyung, Taehyung-
dc.contributor.nonIdAuthorKim, Jong-Dae-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorSilicon Nanowire-
dc.subject.keywordAuthorTop-Down Process-
dc.subject.keywordAuthorThermoelectricity-
dc.subject.keywordAuthorSeebeck Coefficient-
dc.subject.keywordPlusFIGURE-
dc.subject.keywordPlusMERIT-
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