DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Sun-Kak | ko |
dc.contributor.author | Lee, Ju-Min | ko |
dc.contributor.author | Kim, Seung-Jun | ko |
dc.contributor.author | Park, Ji-Sun | ko |
dc.contributor.author | Park, Hyung-Il | ko |
dc.contributor.author | Ahn, Chi-Won | ko |
dc.contributor.author | Lee, Keon-Jae | ko |
dc.contributor.author | Lee, Tak-Hee | ko |
dc.contributor.author | Kim, Sang-Ouk | ko |
dc.date.accessioned | 2013-03-12T23:31:43Z | - |
dc.date.available | 2013-03-12T23:31:43Z | - |
dc.date.created | 2012-07-19 | - |
dc.date.created | 2012-07-19 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.citation | NANO LETTERS, v.12, no.5, pp.2217 - 2221 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/103882 | - |
dc.description.abstract | B- and N-doped carbon nanotubes (CNTs) with controlled workfunctions were successfully employed as charge trap materials for solution processable, mechanically flexible, multilevel switching resistive memory. B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs in polystyrene matrix. Consequently, doped CNT device demonstrated greatly enhanced nonvolatile memory performance (ON-OFF ratio >10(2), endurance cycle >10(2), retention time >10(5)) compared to undoped CNT device. More significantly, the device employing both B- and N-doped CNTs with different charge trap levels exhibited multilevel resistive switching with a discrete and stable intermediate state. Charge trapping materials with different energy levels offer a novel design scheme for solution processable multilevel memory. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | NONVOLATILE MEMORY | - |
dc.subject | SOLAR-CELLS | - |
dc.subject | THIN-FILMS | - |
dc.subject | GRAPHENE OXIDE | - |
dc.subject | DEVICES | - |
dc.subject | BISTABILITY | - |
dc.subject | PERFORMANCE | - |
dc.subject | ENHANCEMENT | - |
dc.subject | INTEGRATION | - |
dc.subject | MECHANISM | - |
dc.title | Flexible Multilevel Resistive Memory with Controlled Charge Trap Band N-Doped Carbon Nanotubes | - |
dc.type | Article | - |
dc.identifier.wosid | 000303696400007 | - |
dc.identifier.scopusid | 2-s2.0-84861017679 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 2217 | - |
dc.citation.endingpage | 2221 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/nl204039q | - |
dc.contributor.localauthor | Lee, Keon-Jae | - |
dc.contributor.localauthor | Kim, Sang-Ouk | - |
dc.contributor.nonIdAuthor | Ahn, Chi-Won | - |
dc.contributor.nonIdAuthor | Lee, Tak-Hee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Resistive memory | - |
dc.subject.keywordAuthor | flexible memory | - |
dc.subject.keywordAuthor | multilevel memory | - |
dc.subject.keywordAuthor | carbon nanotube | - |
dc.subject.keywordAuthor | charge trap | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | GRAPHENE OXIDE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | BISTABILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | MECHANISM | - |
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