DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, Jin-Won | ko |
dc.contributor.author | Park, Jun-Woong | ko |
dc.contributor.author | Lee, Yu-Jin | ko |
dc.contributor.author | Ahn, Seh-Won | ko |
dc.contributor.author | Lee, Heon-Min | ko |
dc.contributor.author | Park, O-Ok | ko |
dc.date.accessioned | 2013-03-12T18:03:41Z | - |
dc.date.available | 2013-03-12T18:03:41Z | - |
dc.date.created | 2012-12-10 | - |
dc.date.created | 2012-12-10 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.10 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/103090 | - |
dc.description.abstract | Hydrogenated amorphous silicon-germanium (a-SiGe:H) solar cells are fabricated with different thicknesses of the i/n graded layer and profiling shapes for appropriate band gap profiling. Comparison of the solar parameters between the U-shape profiling and the exponential shape (E-shape) profiling has been carried out at the same total thickness. In the U-shape profiling, as the thickness of the i/n graded layer increase, the fill factor (FF) and open circuit voltage (V-oc) of p-i-n single-junction a-SiGe:H solar cells increase, but the short circuit current (J(sc)) of cells decreases. In the E-shape profiling, the J(sc) of the a-SiGe:H cell is enhanced without significant losses in V-oc. For further analysis, a modified E-shape profiling is incorporated in a-Si:H/a-SiGe:H double-junction cells, which has resulted in the improvement of V-oc and FF of double-junction cells to 1.67 V and 0.753, respectively, without significant reduction in J(sc, SiGe)(QE), 12.58 mA/cm(2). (C) 2012 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.subject | OPTIMIZATION | - |
dc.title | Graded Layer Modification for High Efficiency Hydrogenated Amorphous Silicon-Germanium Solar Cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000310707800034 | - |
dc.identifier.scopusid | 2-s2.0-84869130080 | - |
dc.type.rims | ART | - |
dc.citation.volume | 51 | - |
dc.citation.issue | 10 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1143/JJAP.51.10NB16 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Park, O-Ok | - |
dc.contributor.nonIdAuthor | Park, Jun-Woong | - |
dc.contributor.nonIdAuthor | Lee, Yu-Jin | - |
dc.contributor.nonIdAuthor | Ahn, Seh-Won | - |
dc.contributor.nonIdAuthor | Lee, Heon-Min | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | OPTIMIZATION | - |
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