Solution Processed Aluminum Paper for Flexible Electronics

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dc.contributor.authorLee, Hye-Moonko
dc.contributor.authorLee, Ha-Beomko
dc.contributor.authorJung, Dae-Sooko
dc.contributor.authorYun, Jung-Yeulko
dc.contributor.authorKo, Seung-Hwanko
dc.contributor.authorPark, Seung-Binko
dc.date.accessioned2013-03-12T18:02:09Z-
dc.date.available2013-03-12T18:02:09Z-
dc.date.created2012-10-29-
dc.date.created2012-10-29-
dc.date.issued2012-09-
dc.identifier.citationLANGMUIR, v.28, no.36, pp.13127 - 13135-
dc.identifier.issn0743-7463-
dc.identifier.urihttp://hdl.handle.net/10203/103088-
dc.description.abstractAs an alternative to vacuum deposition, preparation of highly conductive papers with aluminum (Al) features is successfully achieved by the solution process consisting of Al precursor ink (AlH3{O(C4H9)(2)}) and low temperature stamping process performed at 110 degrees C without any serious hydroxylation and oxidation problems. Al features formed on several kinds of paper substrates (calendar, magazine, and inkjet printing paper substrates) are less than similar to 60 nm thick, and their electrical conductivities were found to be as good as thermally evaporated Al film or even better (<= 2 Omega/square). Strong adhesion of Al features to paper substrates and their excellent flexibility are also experimentally confirmed by TEM observation and mechanical tests, such as tape and bending tests. The solution processed Al features on paper substrates show different electrical and mechanical performance depending on the paper type, and inkjet printing paper is found to be the best substrate with high and stable electrical and mechanical properties. The Al conductive papers produced by the solution process may be applicable in disposal paper electronics.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectTHIN-FILM-
dc.subjectSEMICONDUCTOR-
dc.subjectNANOPARTICLES-
dc.subjectTRANSISTORS-
dc.titleSolution Processed Aluminum Paper for Flexible Electronics-
dc.typeArticle-
dc.identifier.wosid000308839600024-
dc.identifier.scopusid2-s2.0-84866064189-
dc.type.rimsART-
dc.citation.volume28-
dc.citation.issue36-
dc.citation.beginningpage13127-
dc.citation.endingpage13135-
dc.citation.publicationnameLANGMUIR-
dc.identifier.doi10.1021/la302479x-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKo, Seung-Hwan-
dc.contributor.localauthorPark, Seung-Bin-
dc.contributor.nonIdAuthorLee, Hye-Moon-
dc.contributor.nonIdAuthorLee, Ha-Beom-
dc.contributor.nonIdAuthorYun, Jung-Yeul-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.subject.keywordPlusNANOPARTICLES-
dc.subject.keywordPlusTRANSISTORS-
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