A 0.025-0.45 W 60%-Efficiency Inductive-Coupling Power Transceiver With 5-Bit Dual-Frequency Feedforward Control for Non-Contact Memory Cards

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dc.contributor.authorChung, Hayunko
dc.contributor.authorRadecki, Andrzejko
dc.contributor.authorMiura, Noriyukiko
dc.contributor.authorIshikuro, Hirokiko
dc.contributor.authorKuroda, Tadahiroko
dc.date.accessioned2013-03-12T17:20:13Z-
dc.date.available2013-03-12T17:20:13Z-
dc.date.created2013-01-08-
dc.date.created2013-01-08-
dc.date.issued2012-10-
dc.identifier.citationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.47, no.10, pp.2496 - 2504-
dc.identifier.issn0018-9200-
dc.identifier.urihttp://hdl.handle.net/10203/102986-
dc.description.abstractA 0.025-0.45 W inductive-coupling power transceiver for non-contact memory applications is presented. To deal with sudden and large load variations and achieve high-efficiency, we propose a power transceiver with 5-bit feedforward control. Knowing that load patterns of a memory card have strong correlation with commands issued by a host, feedforward control is applied to minimize response times. To achieve 5-bit power levels, the proposed transceiver utilizes pulse-density modulation (PDM) and a multi-channel structure. Different operation frequencies are chosen for each channel to maximize power transfer efficiency. To further improve transceiver efficiency and enable high-speed operation, an active rectifier with a fast positive feedback is proposed. The test prototype demonstrates 40%-70% efficiency across all load conditions and 60% efficiency in average, which are over an order of magnitude improvements compared to prior arts.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectRECTIFIER-
dc.titleA 0.025-0.45 W 60%-Efficiency Inductive-Coupling Power Transceiver With 5-Bit Dual-Frequency Feedforward Control for Non-Contact Memory Cards-
dc.typeArticle-
dc.identifier.wosid000309741200020-
dc.identifier.scopusid2-s2.0-84867401312-
dc.type.rimsART-
dc.citation.volume47-
dc.citation.issue10-
dc.citation.beginningpage2496-
dc.citation.endingpage2504-
dc.citation.publicationnameIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.identifier.doi10.1109/JSSC.2012.2206686-
dc.contributor.localauthorChung, Hayun-
dc.contributor.nonIdAuthorRadecki, Andrzej-
dc.contributor.nonIdAuthorMiura, Noriyuki-
dc.contributor.nonIdAuthorIshikuro, Hiroki-
dc.contributor.nonIdAuthorKuroda, Tadahiro-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorActive rectifier-
dc.subject.keywordAuthordual-frequency-
dc.subject.keywordAuthorfeedforward-
dc.subject.keywordAuthorhigh efficiency-
dc.subject.keywordAuthorinductive-coupling-
dc.subject.keywordAuthorpower transceiver-
dc.subject.keywordAuthorwide load range-
dc.subject.keywordPlusRECTIFIER-
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