Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

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We report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Gecontact at room temperature (RT), employing three-terminal Hanle measurements. A sizable spin signal of similar to 170 k Omega mu m(2) has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of similar to 120 ps and a spin diffusion length of similar to 683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.
Publisher
AMER PHYSICAL SOC
Issue Date
2011-10
Language
English
Article Type
Article
Keywords

METAL/TUNNEL BARRIER CONTACT; SILICON; SEMICONDUCTOR; SPINTRONICS; TRANSPORT; METALS

Citation

PHYSICAL REVIEW B, v.84, no.16

ISSN
1098-0121
DOI
10.1103/PhysRevB.84.165315
URI
http://hdl.handle.net/10203/102942
Appears in Collection
RIMS Journal Papers
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