Effects of Al Concentration on Microstructural Characteristics and Electrical Properties of Al-Doped ZnO Thin Films on Si Substrates by Atomic Layer Deposition

Cited 69 time in webofscience Cited 0 time in scopus
  • Hit : 427
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorLee, Ju-Hoko
dc.contributor.authorLee, Jae-Wonko
dc.contributor.authorHwang, Soo-Yeonko
dc.contributor.authorKim, Sang-Yunko
dc.contributor.authorCho, Hyung-Kounko
dc.contributor.authorLee, Jeong-Yongko
dc.contributor.authorPark, Jin-Seongko
dc.date.accessioned2013-03-12T14:26:02Z-
dc.date.available2013-03-12T14:26:02Z-
dc.date.created2012-10-30-
dc.date.created2012-10-30-
dc.date.issued2012-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5598 - 5603-
dc.identifier.issn1533-4880-
dc.identifier.urihttp://hdl.handle.net/10203/102583-
dc.description.abstractAl-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectLIGHT-EMITTING DEVICES-
dc.subjectROOM-TEMPERATURE-
dc.subjectOXIDE-
dc.titleEffects of Al Concentration on Microstructural Characteristics and Electrical Properties of Al-Doped ZnO Thin Films on Si Substrates by Atomic Layer Deposition-
dc.typeArticle-
dc.identifier.wosid000307604700086-
dc.identifier.scopusid2-s2.0-84865108022-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue7-
dc.citation.beginningpage5598-
dc.citation.endingpage5603-
dc.citation.publicationnameJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.identifier.doi10.1166/jnn.2012.6277-
dc.contributor.localauthorLee, Jeong-Yong-
dc.contributor.nonIdAuthorLee, Jae-Won-
dc.contributor.nonIdAuthorCho, Hyung-Koun-
dc.contributor.nonIdAuthorPark, Jin-Seong-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLIGHT-EMITTING DEVICES-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusOXIDE-
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 69 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0