DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwack, Won-Sub | ko |
dc.contributor.author | Choi, Hyun-Jin | ko |
dc.contributor.author | Choi, Woo-Chang | ko |
dc.contributor.author | Oh, Heung-Ryong | ko |
dc.contributor.author | Shin, Seung-Yong | ko |
dc.contributor.author | Moon, Kyoung Il | ko |
dc.contributor.author | Kwak, Ji-Yeon | ko |
dc.contributor.author | Jeong, Young-Keun | ko |
dc.contributor.author | Kwon, Se-Hun | ko |
dc.date.accessioned | 2013-03-12T13:47:51Z | - |
dc.date.available | 2013-03-12T13:47:51Z | - |
dc.date.created | 2012-08-23 | - |
dc.date.created | 2012-08-23 | - |
dc.date.issued | 2012-06 | - |
dc.identifier.citation | JOURNAL OF CERAMIC PROCESSING RESEARCH, v.13, no.3, pp.338 - 342 | - |
dc.identifier.issn | 1229-9162 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102503 | - |
dc.description.abstract | Ru nanocrystal layers were successfully prepared on the Al2O3/Si substrate by controlling the initial growth stage of Ru plasma-enhanced atomic layer deposition (PE-ALD). The spatial density and average size of the Ru nanocrystals were carefully controlled by the number of deposition cycles during the Ru PE-ALD. When the number of deposition cycles reached 60, the maximum spatial density and average diameter of Ru nanocrystals were 2.5 x 10(12) cm(-2) and 3.8 nm, respectively. In order to measure the electrical characteristics of the nanocrystal floating-gate memory, a metal oxide semiconductor (MOS) structure (p-type Si/Al2O3/Ru nanocrystal layer/Al2O3/Pt) was fabricated without breaking the vacuum. The capacitance-voltage measurement of the MOS structure revealed that the incorporation of a Ru nanocrystal layer resulted in a large flatband voltage shift (4.1 V) at a sweep range of -5 to 5 V, which corresponds to a charge spatial density of 1.22 x 10(-6) C/cm(2). Therefore, the initial stage of Ru PE-ALD can potentially be exploited for next-generation floating-gate memory cells. | - |
dc.language | English | - |
dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
dc.subject | THIN-FILMS | - |
dc.title | Charging characteristics of Ru nanocrystals embedded in Al2O3 matrix prepared by using the initial growth stage of Ru plasma-enhanced atomic layer deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000306164500029 | - |
dc.identifier.scopusid | 2-s2.0-84863844261 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 338 | - |
dc.citation.endingpage | 342 | - |
dc.citation.publicationname | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.contributor.localauthor | Oh, Heung-Ryong | - |
dc.contributor.nonIdAuthor | Kwack, Won-Sub | - |
dc.contributor.nonIdAuthor | Choi, Hyun-Jin | - |
dc.contributor.nonIdAuthor | Choi, Woo-Chang | - |
dc.contributor.nonIdAuthor | Shin, Seung-Yong | - |
dc.contributor.nonIdAuthor | Moon, Kyoung Il | - |
dc.contributor.nonIdAuthor | Kwak, Ji-Yeon | - |
dc.contributor.nonIdAuthor | Jeong, Young-Keun | - |
dc.contributor.nonIdAuthor | Kwon, Se-Hun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ruthenium | - |
dc.subject.keywordAuthor | Nanocrystal | - |
dc.subject.keywordAuthor | PE-ALD | - |
dc.subject.keywordAuthor | Initial growth stageIntroduction | - |
dc.subject.keywordPlus | THIN-FILMS | - |
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